VDD R1 RD CC2 out RL M1 CC1 in NMOS Vin R2 RS CB1 Given a Common-Source EMOSFET Amplifier circuit with: VDD = 12 V, R1 = 100 kQ, R2 = 100 kQ, RD = 1kQ, RS = 1 kN, RL = 1k0, CC1 = 10 µF, CC2 = 10 µF, CB1 = 100 µF, VTH = 0.7 V, W/L = 20, KP = 750 µA/V2, LAMBDA = 0, CGD = 5 pF, and CGS = 5 pF.
Power Amplifier
The power amplifier is an electronic amplifier designed to maximize the signal strength of a given input. The input signal strength is enhanced to a high enough level to drive output devices such as speakers, headphones, RF (Radio frequency) transmitters, etc. Unlike voltage / current amplifiers, the power amplifier is designed to drive core loads directly and is used as a storage block in the amplifier series.
Maximum Efficiency Criterion
In every field of engineering, there is a tremendous use of the machine and all those machines are equipped for their popular work efficiency so it very much important for operation engineers to monitor the efficiency of the machine, planning engineers to check out the efficiency of the machine before installing the machine and design engineers to design machine for higher efficiency than and then the utility will procure their products that will ultimately lead to profit and loss of the company. It indicates the importance of efficiency right from the initial stage as manufacturing units, intermediate stage as planning coordinators, and end-users stage as a utility.
(a) Determine the lower corner frequency of this amplifier. ωL = _____ Hz
(b) What is the higher corner frequency of this amplifier. ωH = _____ kHz
Here are the initial values that I obtained for the dc operating drain current and the magnitude of the voltage gain. [Kindly double check]
ID = 4.52 mA
| Av | = 0.46
Thank you
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