In the circuit below, the transistor has Ic = 1mA, IB = 5µA, and VBE = 0.5V. The source %3D current (S1) is given by sin(500t) µA. Assume VT=25mV Vcc 20V R1 1mA 5µA 10knS Vo S1 a. Compute the value of R1 (hint: VRI = 20 – VBE – Vo) %3D b. Compute the value of the small-signal input resistance for the BJT, r¤ c. What is the total voltage across the current source, S1? (hint: Vsi = DC+ AC)

In the circuit below, the transistor has Ic = 1mA, IB = 5µA, and VBE = 0.5V. The source %3D current (S1) is given by sin(500t) µA. Assume VT=25mV Vcc 20V R1 1mA 5µA 10knS Vo S1 a. Compute the value of R1 (hint: VRI = 20 – VBE – Vo) %3D b. Compute the value of the small-signal input resistance for the BJT, r¤ c. What is the total voltage across the current source, S1? (hint: Vsi = DC+ AC)

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

See similar textbooks

Similar questions

Set up a midpoint bias for a JFET with IDSS = 14 mA and VGS(off) = -10 V. Use a 24 V dc source as the supply voltage. Show the circuit and resistor values. Indicate the value of ID. Indicate the value of VGS. Indicate the value of VDS.
Q-3. Find the drain-source voltage, Vos, for the E- MOSFET circuit given below. The device parameters are: Ioss = 4 mA and Vm = 2 V. +15V Rp- 2k 4M R1 + Vps 2M R2
Determine VB, VE, VC, VCE, IB, IE, and IC in Figure. The 2N3904 is a general purpose transistor with a typical BDC 200 Vcc +30 V WWII VCE VB R₁ • 22 ΚΩ IC(mA) Chọn... * Chọn... * IB(UA) Chọn... * IE(MA) Chọn... ◆ Chọn... * Chọn... * Chọn... * VE VC R₂ ´ 10 ΚΩ www Rc 1.0 ΚΩ 2N3904 PDC=200 RE 1.0 ΚΩ
Design a voltage-divider bias network using a supply of 28 V, a transistor with a beta of 110, and an operating point of IcQ = 6 mA and VCEQ = 6 V. Choose VẸ = 1/8 Vcc- %3D %3D %3D Use BRE = 10R2- 1. How much is the emitter voltage?
A certain npn silicon transistor has vBE=0.7 V for iB=0.1 mA at a temperature of 30°C. Sketch the input characteristic to scale at 30°C. What is the approximate value of vBE for iB = 0.1 mA at 180°C? (Use the rule of thumb that vBE is reduced in magnitude by 2 mV per degree increase in temperature.) Sketch the input characteristic to scale at 180°C.
3. Write down which transistor structure each curve characteristic belongs to in the figure. Ip -VGS -VGS +VGs (c) VGS (b) (a)
Q2 Design a voltage divider bias circuit for an npn silicon transistor having B %D 100 to be used in a Common Emitter configuration. The quiescent point = 1 mA, VCE = 5 V. The supply voltage (Vcc) is 15 V. (Q point) is to be l. Assume VĘ = 0.1Vcc and BRĘ 2 10R2. (a)Find all the resistors values and draw the schematic diagram of this Common Emitter Amplifier with bypass capacitor CE.
A 4.7 zener diode is connected to the base resistor. The left side of the resistor sits at about 12V. The right side of the biasing resistor is connected to the Zener and npn transistor. The Zener bias is 5mA. The base current needed is 80uA. What is the appropriate resistor for this circuit? (In kohms) I
........ (Figure-1) R. RB= 380kN,Rc= 1kN B = 100, VBB = Vcc=12V RB ww Vec CC ......... I, V CE СЕ V ВЕ BB Q-1-b) Describe briefly the input / output characteristics and application of Common Emitter BJT Configuration
circuit shown in the figure, Kn = 2mA / V2, VIN = 0.7V for Mi mosfeti. So, what kind of relationship should there be between R1 and R2 resistance for mosfet to work at saturation?
Problem5: For the common base circuit shown in figure find L and Vca. Assume transistor is Silicon.(a=0.98) IE Ic RE= 1.5 kQ Rc= 1.2 k VEE =8 V Vcc= 18 V
c. For the circuit shown in Figure, determine lc and VCB. Assume the transistor to be made of Silicon. Ic RE=1.6 kn Rc=1.1 kn EE=8 V Vcc= 20 v