MOSFET Exploration 2_N-MOSFET DC Biasing and CS Amp Configurations

Draw, Illustrate and label your schematic diagram before solving the problem. 3) Given an Emitter-Stabilize Biased transistor circuit with beta DC is 250,Base resistor is 150 ohms, collector resistor is 1.5k ohms ,emitter resistor is 500 ohms ,emitter voltage supply is -5v and  Voltage at common collector is +28V,Voltage at Base-emitter junction  is 0.7v,. Determine Base current, Collector current and Voltage at collector-emitter junction.

MOSFET Amplifier: 1. Determine the drain-to-source voltage (VDs) if VDD = +1sV and RD = 6202. The MOSFET data sheet gives and Ipss = 12 mA. (Ans: Vps=10.6 V) %3D

A Bipolar junction Transistor with curreat amplification factor being 100, Input Base current  is 50μA. Collector voltage is 10 V and biasing voltage being +20 V. Find followings a. Collector current   b. Resistance (R1) c. Collector voltage , Emitter voltage , Base Voltage & Collector-Emitter Voltage.

QUESTION 4 For an n-channel Junction Field-Effect Transistor (JFET), the gate-source cut-off voltage, VGS(OFF), is -4 V and the drain saturation current, Ipss is 50 mA. The drain current ID, is 12 mA. Determine the gate-to-source voltage, Vos, of the JFET.

All field-effect transistors are unipolar rather than bipolar devices. That is, the main current through them is comprised either of through an N-type semiconductor * ..... .....

4 For the transistor shown in below figure, Calculate the value of R, that will just make the transistor work as closed switch. Hence Bpc= 80, VBE = 0.7V, VCE(sat) = 0.2V, Vcc= 12V, Rc= 2.7KN. la) Calculate the In and I.. Vcc RB Rc |b) Calculate Rp- B'

A circuit responding to temperature is shown in figure 6. Assume the diode equation is given by Ia Ioe(qVa/kT). What is the DC operating point of the circuit at the temperature T. Also determine the small signal output swing Av, due to an incremental change in temperature AT. For this question assume Rį = 0. Heat T+AT V. DD D'B R₁ OV +AV Figure 6: Temperature sensor

What is the role of resistor R3 in getting the low bias current we are obtaining out of the Widlar source? I don't really know the importance of R3 when looking at the figure. Is it because it controls the amount of current flowing through the transistor?

What sets an integrated circuit distinct from a transistor, and what are their similarities?

5- a-) Define the MOSFET in the figure, explain by drawing its input and output circuit characteristics.b-) Since k=0.1 mA/V2, VGS=5V and VT=2.5V for this MOSFET, find the VDS voltage using the circuit.

1. For a certain D-MOSFET, IDSS = 18 mA, and VGS = +10V. Vp =4V. a) Determine ID at VGS =+ 3V. b) Determine ID at VGS = -3V. %3D

Consider the circuit in Figure 2. The transistor has a parameter B that varies between 50 and 200. You want to know the operation of the circuit and the electrical variables at the end points. Calculate the following for B= 50 and B= 200. a) IE, VE and VB (Analysis in DC). b) The input resistance R." (Small signal analysis). c) The voltage gain VO/Vsing (Small signal analy). This 10 ΚΩ www o Rin 100 ΚΩ +3V +1₁ HH 1 ΚΩ 1₁ 1 ΚΩ

A cascode circuit is shown in Figure 4 below: v+ Rp R1 CG M2 R2 Cc M1 R3 Rs Cs V- Figure 4 The transistor parameters are Kn1 = Kn2 = 0.8 mA/V² and VTNI = VTN2= 1.2 V. The cascode circuit operates at Ip = 0.4 mA in each transistor. (a) Draw the AC equivalent circuit for the cascode circuit shown in Figure 4 above. (b) Draw the small-signal equivalent circuit for the cascode circuit shown in Figure 4 above. (c) Design the cascode circuit with a voltage gain (Av) of -5.0. wwo s

Pictorially describe the fabrication steps of N-channel E MOSFET. The drawing and steps be in more details

9. Design a biased-transistor circuit using VBB = Vcc= 10 V for a Q-point of Ic = 5 mA and VCE 4 V. Assume pc = 100. The design involves finding RB, RC, and the minimum power rating of the transistor. (The actual power rating should be greater.) Sketch the circuit.

a) What is a Field effect transistor? Give its description and classification.b) Explain the working of n-channel / p-channel Junction Field EffectTransistor with its drain characteristics.

How to calculate the bias resistor of a common emitter amplifier. The design curretn is 0.55mA. Bera is assumed to be 200 and the Vcc = 12V. Note: the bias resistor should be high.

(ii) Calculate the RB, Rc, and the minimum power rating of the transistor (Note: the actual power rating should be greater).

For the Enhancement-type MOSFET in following figure,   1.Determine   IDQ and VGSQ

Design the following MOSFET circuit for it to operate in saturation mode with 0.5 mA drain current. Determine Rp and dc voltage VĎ. Assume V₁ = 2 V and K = 0.1 mA/V² for this MOSFET. 10 V RD -VD

Determine the VDS and the drain current for the E-MOSFET circuit shown. The data sheet for this particular MOSFET gives ID(ON)=500 mA at VGS=10 V and VGS(th)=1 V.

An NPN silicon transistor having a nominal ß of 100 is to be used in a CE configuration with Vcc= 15 V. The Q point is to be Ic = 4mA and VcE = 12V . Now design the circuit diagram.

a) The n-channel JFET and the D-MOSFET have very similar I-V output characteristics. Which of these two structures can be operated in enhancement mode and why is that possible?

(a)(i) State three differences between the Field Effect Transistor (FET) and the Bipolar JunctionTransistor (BJT). (ii) Draw the physical structure and device symbol for an n-channel JFET. (iii) What is meant by drain characteristics  (b) Determine the drain current of an n-channel JFET having pinch-off voltage VP = - 4 and drain-source saturation current IDSS=12mA at the following gate-source voltages(i) VGS= 0V(ii) VGS= -2V (c) Calculate the transconductance, gm of a JFET having specified values of IDSS=12mA and VP= - 4V at bias points(i) VGS= 0V and(ii) VGS= -1.5V.

The DC Current Gain of a Transistor is Select one: a. Ratio of Collector Current to Base Current b. Ratio of Base Current to Collector Current c. Ratio of Emitter Current to Collector Current d. Ratio of Base Current to Emitter Current

- Explain the effect of base resistance and collector resistance on the circuit.

Discuss High level modulator: circuit diagram and operation - Collector modulator

2. Determine the VCB (i.e., voltage difference between collector C and base B) in the transistor circuit shown in the figure below. The transistor is silicon type (i.e., VBE is 0.7V) and has current gain hEE- 150. (Assume the transistor is working on active region) Rc 100 2 RB 10V Vcc 10 k2 VBR = 5V

Draw the two-resistor bias circuit (a “mirror image” ) that would be usedto bias an npn transistor from a single +9-V supply using the same two resistor values.

Qa: A transistor dissipates 50W in an ambient temperature of 60°C, the thermal resistances are 0-0.5 °CW¹, 8ca-4 °CW. Determine the junction temperature without a heat sink. Determine the thermal resistance of the heat sink to avoid the junction temperature exceeding 180°C. )

4 For the transistor shown in below figure, Calculate the value of R; that will just make the transistor work as closed switch. Hence Bpc = 80, VBE = 0.7V, VCE(sat) = 0.2V, Vcc = 12V, R. = 2.7KN. a) Calculate the I, and I.. Vcc RB Rc b) Calculate Rp.

Discuss the main features of the two basic types of MOSFETs. If the gate-to-source voltage in an n-channel E-MOSFET is made more positive, does the drain current increase or decrease? If the gate-to-source voltage in an n-channel depletion MOSFET is made more negative, does the drain current increase or decrease?